BEGIN:VCALENDAR VERSION:2.0 METHOD:REQUEST PRODID:-//ddaysoftware//NONSGML DDay.iCal 1.0//EN BEGIN:VTIMEZONE TZID:Eastern Standard Time BEGIN:STANDARD DTSTART:20071102T020000 RRULE:FREQ=YEARLY;BYDAY=1SU;BYHOUR=2;BYMINUTE=0;BYMONTH=11 TZNAME:Eastern Standard Time TZOFFSETFROM:-0400 TZOFFSETTO:-0500 END:STANDARD BEGIN:DAYLIGHT DTSTART:20070301T020000 RRULE:FREQ=YEARLY;BYDAY=2SU;BYHOUR=2;BYMINUTE=0;BYMONTH=3 TZNAME:Eastern Daylight Time TZOFFSETFROM:-0500 TZOFFSETTO:-0400 END:DAYLIGHT END:VTIMEZONE BEGIN:VEVENT DESCRIPTION:Professor Arokia Nathan\, Chair of Photonic Systems & Displays\ , Department of Engineering\, University of Cambridge\, UK\n\nThe oxide se miconductor is becoming a key material for future electronics because of t heir wide band gap\, hence high transparency and low OFF current\, compare d with the ubiquitous silicon thin-film technology. The oxide can be proce ssed at room temperature and at low fabrication cost\, which makes it amen able for integration on a wide range of substrate materials including plas tic and paper. This talk will review the new generation of applications of oxides ranging from large area electronics to the newly emerging Internet of Things. While the oxide transistor continues to evolve\, producing dev ices with higher mobility\, steeper sub-threshold slope and lower threshol d voltage\, practical circuits are constrained by issues related to non-un iformity\, electrically- and illumination-induced instability\, and temper ature dependence. We will discuss the critical design considerations of di splays\, sensors and sensor interfaces to show how device-circuit interact ions should be handled and how compensation methods can be implemented. In particular\, the quest for low power becomes highly compelling in newly e merging application areas related to wearable devices in the Internet of T hings. We will discuss thin-film transistor operation near the OFF state\, driven by the pivotal requirement of low supply voltage and ultralow powe r\; the operation of the wearable device is challenged by limited battery lifetime even if augmented with energy harvesting.\nReception to Follow\nF ree Admission | Open to the Public\nMore information at nano.uwaterloo.ca \n\n DTEND;TZID=Eastern Standard Time:20170317T160000 DTSTAMP:20170313T151742Z DTSTART;TZID=Eastern Standard Time:20170317T150000 LAST-MODIFIED:20170313T151742Z LOCATION:QNC 0101 ORGANIZER;CN=Waterloo Institute for Sustainable Energy via Waterloo Institu te for Sustainable Energy:MAILTO:d316e8f7-0577-4b19-9bfc-4b14c07102e1.21@c a.igloosoftware.com SEQUENCE:0 SUMMARY:Waterloo Institute for Nanotechnology Distinguished Lecture Series Presents: Transparent & Flexible Oxide Nano-Electronics UID:d316e8f7-0577-4b19-9bfc-4b14c07102e1 X-ALT-DESC;FMTTYPE=text/html;FMTTYPE=text/html:Professor Arokia Nathan\, Ch air of Photonic Systems & Displays\, Department of Engineering\, Universit y of Cambridge\, UK\n\n
The oxide semiconductor is becoming a key material for future electronics because of their wide band gap\, hence high transparency and low OFF current\, compared with the ubiquitous sili con thin-film technology. The oxide can be processed at room temperature a nd at low fabrication cost\, which makes it amenable for integration on a wide range of substrate materials including plastic and paper. This talk w ill review the new generation of applications of oxides ranging from large area electronics to the newly emerging Internet of Things. While the oxid e transistor continues to evolve\, producing devices with higher mobility\ , steeper sub-threshold slope and lower threshold voltage\, practical circ uits are constrained by issues related to non-uniformity\, electrically- a nd illumination-induced instability\, and temperature dependence. We will discuss the critical design considerations of displays\, sensors and senso r interfaces to show how device-circuit interactions should be handled and how compensation methods can be implemented. In particular\, the quest fo r low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. We will discuss thi n-film transistor operation near the OFF state\, driven by the pivotal req uirement of low supply voltage and ultralow power\; the operation of the w earable device is challenged by limited battery lifetime even if augmented with energy harvesting.
Reception to Follow
Free Admission | Open to the Public
More information at nano.uwaterloo.ca