Last Updated:
February 17, 2017
by
| Version: 10
| 6,636 views
| 1 follower
members are following updates on this item.
Wang, L., Cluitmans, P. J., Arends, J. B., Wu, Y., & Sazonov, A. V. (2015, August). Epileptic seizure detection on patients with mental retardation based on eeg features: A pilot study. In Engineering in Medicine and Biology Society (EMBC), 2015 37th Annual International Conference of the IEEE (pp. 578-581). IEEE
Lee, C. H., Wong, W. S., Sazonov, A., & Nathan, A. (2015). Study of deposition temperature on high crystallinity nanocrystalline silicon thin films with in-situ hydrogen plasma-passivated grains. Thin Solid Films, 597, 151-157.
Vygranenko, Y., Fernandes, M., Sazonov, A., & Vieira, M."Driving Scheme Using MIS Photosensor for Luminance Control of AMOLED Pixel." Journal of Display Technology 9.8 (2013): 651-655.
http://www.opticsinfobase.org/abstract.cfm?uri=jdt-9-8-651
Moradi M., Pathirane, M., Sazonov, A., Chaji, R., & Nathan, A. "TFTs With High Overlay Alignment for Integration of Flexible Display Backplanes." Display Technology, Journal of 8.2 (2012): 104-107.
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6145185
Chan, I., Moradi, M., Sazonov, A., & Nathan, A. (2011). 150 <formula formulatype="inline"><tex Notation="TeX">$^{\circ}$</tex></formula>C Amorphous Silicon Thin Film Transistors With Low-Stress Nitride on Transparent Plastic. Journal Of Display Technology, 7(1), 36-39.
http://web.ebscohost.com/ehost/detail?sid=48e96806-0cdf-44cf-bc08-05f7c6edc37f%40sessionmgr113&vid=1&hid=125&bdata=JnNpdGU9ZWhvc3QtbGl2ZSZzY29wZT1zaXRl#db=eoah&AN=23066369
Chan, I., Moradi, M., Sazonov, A., & Nathan, A. (2011). 150 °C Amorphous Silicon Thin Film Transistors With Low-Stress Nitride on Transparent Plastic. Journal Of Display Technology, 7(1), 36-39.
http://web.ebscohost.com/ehost/detail?sid=af1316aa-c19c-4d23-a03d-37bc3888d888%40sessionmgr110&vid=1&hid=125&bdata=JnNpdGU9ZWhvc3QtbGl2ZSZzY29wZT1zaXRl#db=eoah&AN=23303415
Vygranenko, Y., Fernandes, M., Louro, P., Vieira, M., & Sazonov, A. (2010). Optoelectronic properties of a‐Si1-xCx:H films grown in hydrogen diluted silane‐methane plasma. Physica Status Solidi (C), 7(3-4), 782-785.
http://web.ebscohost.com/ehost/detail?sid=73f79a41-c8a7-4621-b682-6dd1f2a451b8%40sessionmgr111&vid=1&hid=125&bdata=JnNpdGU9ZWhvc3QtbGl2ZSZzY29wZT1zaXRl#db=eoah&AN=20980100
Vygranenko, Y., Nathan, A., Vieira, M., & Sazonov, A. (2010). Phototransistor with nanocrystalline Si/amorphous Si bilayer channel. Applied Physics Letters, 96(17), 173507-173507-3.
http://web.ebscohost.com/ehost/detail?sid=edf9f69e-e11b-4d48-aa5d-83e5dcfb10d9%40sessionmgr114&vid=1&hid=125&bdata=JnNpdGU9ZWhvc3QtbGl2ZSZzY29wZT1zaXRl#db=eoah&AN=21264961
Sazonov, A., Ho, C., Bergmans, J., Arends, J., Griep, P., Verbitskiy, E., & ... Boon, P. (2009). An investigation of the phase locking index for measuring of interdependency of cortical source signals recorded in the EEG. Biological Cybernetics, 100(2), 129-146.
http://web.ebscohost.com/ehost/detail?sid=7716412d-a23d-4980-9dc4-2ca1688fb296%40sessionmgr114&vid=1&hid=125&bdata=JnNpdGU9ZWhvc3QtbGl2ZSZzY29wZT1zaXRl#db=eoah&AN=17756954
A.Sazonov, M.Meitine, D.Striakhilev, and A.Nathan, (2006) "Low Temperature Amorphous and Nanocrystalline Silicon Based TFTs for Flexible Electronics," Fizika i Technika Poluprovodnikov 40: 986-994 (Semicond. 40: 986-994).
http://dx.doi.org/10.1007/978-0-387-74363-9_3
C.-H. Lee (Student), A. Sazonov, and A. Nathan, (2006) "High-performance n-channel 13.56 MHz plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors," J.Vac.Sci.Technol.A, 24: 618-623 (also appeared in Virtual Journal of Nanoscale Science & Technology, 13: iss.20 (2006)).
http://dx.doi.org/10.1116/1.2194027
C.-H. Lee (Student), A. Sazonov, and A. Nathan, (2006) "High Hole and Electron Mobilities in Nanocrystalline Silicon Thin-Film Transistors," J.Non-Cryst.Solids, 352: 1732-1736.
http://dx.doi.org/10.1016/j.jnoncrysol.2005.11.149
C.-H. Lee (Student), D.J. Grant (Student), A. Sazonov, and A. Nathan, (2005) "Postdeposition thermal annealing and material stability of 75 °C hydrogenated nanocrystalline silicon plasma-enhanced chemical vapor deposition films ," J.Appl.Phys., 98: 034305-1 - 034305-7.
http://dx.doi.org/10.1063/1.1993777
C.-H. Lee (Student), A. Sazonov, and A. Nathan, (2005) "High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition," Appl.Phys.Lett., 86: 222106-1 - 222106-3 (also appeared in Virtual Journal of Nanoscale Science & Technology, 11: iss.22 (2005)).
http://dx.doi.org/10.1063/1.1942641
A. Sazonov, D. Striakhilev, C.H.Lee (Student), A. Nathan, (2005) "Low Temperature Materials and Thin Film Transistors for Flexible Electronics," Proceedings of the IEEE, 93: 1420-1428.
http://dx.doi.org/10.1109/JPROC.2005.851497
Full List of Publications: https://ece.uwaterloo.ca/~asazonov/journal_papers.htm
Page Options